55*0.25mm

Specification：

Parameter	Specification Range
Thermal Conductivity	1000–2200 W/(m·K) @25°C (customizable grades: TC1200 / TC1500 / TC1800 / TC2000)
Coefficient of Thermal Expansion (CTE)	0.8–1.0 ppm/K (well matched to Si, GaN)
Electrical Resistivity	10¹⁴–10¹⁶ Ω·cm
Dielectric Constant	~5.68 @1MHz
Dielectric Loss	~6.2×10⁻⁸ @1MHz
Dielectric Strength	≥11 kV/mm
Density	3.52 g/cm³
Vickers Hardness	>8000 kg/mm²
Young's Modulus	850–1100 GPa
Tensile Strength	450–1100 MPa
Thermal Diffusivity	6.6–11.0 cm²/s (increases with thermal conductivity grade)
Dimensions	Customizable; supports 2 / 3 / 4 / 6‑inch wafers and non‑standard shapes; max size 120 mm × 120 mm
Thickness	200–1000 μm (customizable)
Surface Roughness	Growth side: Ra <1–30 nm (fine polishing down to <2 nm) Nucleation side: Ra <30 nm
TTV (Total Thickness Variation)	<60 μm (for 2‑inch; customizable)
Warpage	<300 μm (for 2‑inch; customizable)